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2N7000G
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Bulk Through Hole N-Channel Single Mosfet Transistor 200mA Ta 200mA 350mW 10ns
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Inventory: 4559
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.148656
≥1 USD $0.148656
≥10 USD $0.140236
≥100 USD $0.132309
≥500 USD $0.124816
≥1000 USD $0.117751
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 350mW Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 60V
Nominal Vgs 3 V
Feedback Cap-Max (Crss) 5 pF
Physical
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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