Welcome to AAA CHIPS!
  • English

IRFS3206PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 120A D2PAK
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 5832
Minimum: 1
Total Price: USD $1.53
Unit Price: USD $1.53045
≥1 USD $1.53045
≥10 USD $1.2559
≥100 USD $1.21695
≥500 USD $1.178
≥1000 USD $1.1381

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 4.826mm
Length 10.67mm
Width 9.65mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 210A
Power Dissipation-Max 300W Tc
Element Configuration Single
Power Dissipation 300mW
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6540pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 82ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 83 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 210A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Recovery Time 50 ns

Alternative Model

Recommended For You