Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 200W Tc
Power Dissipation 200W
Turn On Delay Time 24 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 50V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 88A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V