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MTB30P06VT4G
ON SemiconductorRoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 30A Tc 30A 3W 52.4ns
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Inventory: 9641
Minimum: 1
Total Price: USD $7.52
Unit Price: USD $7.51735
≥1 USD $7.51735
≥10 USD $6.16835
≥100 USD $5.9755
≥500 USD $5.78265
≥1000 USD $5.59075
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 4.83mm
Length 10.29mm
Width 9.65mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 80MOhm
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -30A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 14.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 25.9ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Fall Time (Typ) 52.4 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage -60V
Avalanche Energy Rating (Eas) 450 mJ
Nominal Vgs -2.6 V
Alternative Model
No data
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