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FDD6680A
ON SemiconductorRoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PowerTrench? Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 14A Ta 56A Tc 56A 2.8W 13ns
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Inventory: 1333
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.133
≥1 USD $0.133
≥500 USD $0.10925
≥1000 USD $0.1064
≥2000 USD $0.1026
≥5000 USD $0.09975
≥10000 USD $0.0893
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FDD6680
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.8W Ta 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1425pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 55A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 205 mJ
Compliance
REACH SVHC Unknown
RoHS Status RoHS Compliant
Alternative Model
No data
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