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2SK4125
ON SemiconductorRoHS
/
Package TO-3P-3, SC-65-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tray Through Hole N-Channel Single Mosfet Transistor 17A Ta 17A 2.5W 52ns
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Inventory: 2415
Minimum: 1
Total Price: USD $49.87
Unit Price: USD $49.8674
≥1 USD $49.8674
≥10 USD $40.9165
≥100 USD $39.6378
≥500 USD $38.3591
≥1000 USD $37.0804
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tray
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 2.5W Ta 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 26.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 610m Ω @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 17A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 82ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 145 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.61Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 86.5 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
No data
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