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IXFN48N50U3
IXYSRoHS
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Package SOT-227-4, miniBLOC
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 48A SOT-227B
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Inventory: 2232
Minimum: 1
Total Price: USD $6.63
Unit Price: USD $6.63385
≥1 USD $6.63385
≥10 USD $5.4435
≥100 USD $5.27345
≥500 USD $5.10245
≥1000 USD $4.9324
Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 35
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 520W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 48A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.08Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 192A
Compliance
RoHS Status RoHS Compliant
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