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IPP80N04S303AKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
OptiMOS? Tube Through Hole N-Channel Mosfet Transistor 80A Tc 80A 188W Tc 40V
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Inventory: 8019
Minimum: 1
Total Price: USD $1.19
Unit Price: USD $1.185986
≥1 USD $1.185986
≥10 USD $1.118857
≥100 USD $1.055524
≥500 USD $0.995778
≥1000 USD $0.939416
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0035Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 526 mJ
Alternative Model
No data
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