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IPP80N03S4L04AKSA1
Infineon TechnologiesRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
OptiMOS? Tube Through Hole N-Channel Mosfet Transistor 80A Tc 80A 94W Tc 7ns
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Inventory: 3070
Minimum: 1
Total Price: USD $0.97
Unit Price: USD $0.967343
≥1 USD $0.967343
≥10 USD $0.912587
≥100 USD $0.860934
≥500 USD $0.812201
≥1000 USD $0.766228
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 94W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 45μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 95 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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