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NTD4813N-35G
ON SemiconductorRoHS
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Package TO-251-3 Stub Leads, IPak
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 7.6A Ta 40A Tc 9A 1.94W 19.3ns
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Inventory: 4260
Minimum: 1
Total Price: USD $1.86
Unit Price: USD $1.8563
≥1 USD $1.8563
≥10 USD $1.52285
≥100 USD $1.47535
≥500 USD $1.42785
≥1000 USD $1.38035
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1.27W Ta 35.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.94W
Case Connection DRAIN
Turn On Delay Time 10.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V
Rise Time 19.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 19.3 ns
Turn-Off Delay Time 10.1 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.6A
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 90A
Avalanche Energy Rating (Eas) 72 mJ
Alternative Model
No data
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