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IRF7534D1PBF
Infineon TechnologiesRoHS
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Package 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 4.3A MICRO-8
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Inventory: 939
Minimum: 1
Total Price: USD $3.4
Unit Price: USD $3.39625
≥1 USD $3.39625
≥10 USD $2.78635
≥100 USD $2.6999
≥500 USD $2.6125
≥1000 USD $2.5251
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Supplier Device Package Micro8?
Dimensions
Height 910μm
Length 3.05mm
Width 3.05mm
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series FETKY?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.25W Ta
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 55mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1066pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 4.3A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 12V
Input Capacitance 1.066nF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 55mOhm
Rds On Max 55 mΩ
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