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NTD4856NT4G
ON SemiconductorRoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 13.3A Ta 89A Tc 16.8A 2.14W 7.5ns
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Inventory: 4616
Minimum: 1
Total Price: USD $16.7
Unit Price: USD $16.6953
≥1 USD $16.6953
≥10 USD $13.699
≥100 USD $13.2715
≥500 USD $12.84305
≥1000 USD $12.4146
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.33W Ta 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.14W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2241pF @ 12V
Current - Continuous Drain (Id) @ 25°C 13.3A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 22.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 27.2 ns
Continuous Drain Current (ID) 16.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 89A
Drain-source On Resistance-Max 0.0068Ohm
Drain to Source Breakdown Voltage 25V
Alternative Model
No data
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