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NTD4815NH-35G
ON SemiconductorRoHS
/
Package TO-251-3 Stub Leads, IPak
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 17.6ns
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Inventory: 4443
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Total Price: USD $1.66
Unit Price: USD $1.658924
≥1 USD $1.658924
≥10 USD $1.565021
≥100 USD $1.476434
≥500 USD $1.392864
≥1000 USD $1.314021
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.26W Ta 32.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.92W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 845pF @ 12V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 4.5V
Rise Time 17.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 17.6 ns
Turn-Off Delay Time 18.4 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.9A
Drain-source On Resistance-Max 0.015Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 87A
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
No data
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