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NTD4809NA-1G
ON SemiconductorRoHS
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Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 2.3ns
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Inventory: 1477
Minimum: 1
Total Price: USD $1.5
Unit Price: USD $1.498728
≥1 USD $1.498728
≥10 USD $1.413896
≥100 USD $1.333865
≥500 USD $1.258359
≥1000 USD $1.187134
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.3W Ta 52W Tc
Element Configuration Single
Power Dissipation 2W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1456pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9.6A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 22.7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 2.3 ns
Turn-Off Delay Time 25.3 ns
Continuous Drain Current (ID) 11.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Alternative Model
No data
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