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NTD4810NH-1G
ON SemiconductorRoHS
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Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 9A Ta 54A Tc 54A 1.28W Ta 50W Tc 30V
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Pricing & Ordering
Inventory: 8917
Minimum: 1
Total Price: USD $1.35
Unit Price: USD $1.35375
≥1 USD $1.35375
≥10 USD $1.11055
≥100 USD $1.07635
≥500 USD $1.0412
≥1000 USD $1.007
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 265
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.28W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9A Ta 54A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 54A
Drain Current-Max (Abs) (ID) 10.8A
Drain-source On Resistance-Max 0.0167Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 66 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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