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NTD4805N-1G
ON SemiconductorRoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 12.6A IPAK
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Inventory: 2077
Minimum: 1
Total Price: USD $0.1
Unit Price: USD $0.1026
≥1 USD $0.1026
≥500 USD $0.08455
≥1000 USD $0.0817
≥2000 USD $0.07885
≥5000 USD $0.076
≥10000 USD $0.0684
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 1.41W Ta 79W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.24W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2865pF @ 12V
Current - Continuous Drain (Id) @ 25°C 12.7A Ta 95A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 11.5V
Rise Time 20.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 20.8 ns
Continuous Drain Current (ID) 88A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 95A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 288 mJ
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