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TP0202K-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 385MA SOT23-3
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Inventory: 5452
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.0475
≥1 USD $0.0475
≥500 USD $0.03895
≥1000 USD $0.038
≥2000 USD $0.0361
≥5000 USD $0.03515
≥10000 USD $0.03135

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.5Ohm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Voltage 20V
Power Dissipation-Max 350mW Ta
Element Configuration Single
Current 4A
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 31pF @ 15V
Current - Continuous Drain (Id) @ 25°C 385mA Ta
Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V
Rise Time 6 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -385A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Nominal Vgs -1.3 V

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