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TN0200K-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V SOT23-3
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Inventory: 9747
Minimum: 1
Total Price: USD $0.51
Unit Price: USD $0.51015
≥1 USD $0.51015
≥10 USD $0.41895
≥100 USD $0.40565
≥500 USD $0.39235
≥1000 USD $0.38
Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Technical
Packaging Cut Tape (CT)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 400mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Max Power Dissipation 350mW
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Voltage 20V
Element Configuration Single
Current 12A
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 50μA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
Rise Time 20 ns
Fall Time (Typ) 20 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 730mA
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 600 mV
Dimensions
Height 1.016mm
Length 3.0226mm
Width 3.05mm
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