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IXFR120N20
IXYSRoHS
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Package ISOPLUS247?
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 105A ISOPLUS247
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Inventory: 3618
Minimum: 1
Total Price: USD $104.29
Unit Price: USD $104.287924
≥1 USD $104.287924
≥10 USD $98.384827
≥100 USD $92.815875
≥500 USD $87.562149
≥1000 USD $82.605804
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Resistance 17MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 105A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 417W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 105A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Rise Time 65 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 105A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 480A
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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