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IRLMS2002TR
Infineon TechnologiesRoHS
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Package SOT-23-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 6.5A 6-TSOP
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Inventory: 5633
Minimum: 1
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥10 USD $0.551
≥100 USD $0.5339
≥500 USD $0.5168
≥1000 USD $0.4997
Technical Details
Physical
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Transistor Element Material SILICON
Technical
Packaging Cut Tape (CT)
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 6.5A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 20V
Compliance
RoHS Status Non-RoHS Compliant
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