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BUK9M120-100EX
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SOT-1210, 8-LFPAK33
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
BUK9M120-100E - N-channel 100 V, 120 mO logic level MOSFET in LFPAK33
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Inventory: 3461
Minimum: 1
Total Price: USD $6.91
Unit Price: USD $6.91315
≥1 USD $6.91315
≥10 USD $5.67245
≥100 USD $5.4948
≥500 USD $5.31715
≥1000 USD $5.14045
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 44W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 119m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.05V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 882pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.5A Tc
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Continuous Drain Current (ID) 11.5A
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 46A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 13.2 mJ
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