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FQD7P06TM
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 5.4A DPAK
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Inventory: 6191
Minimum: 1
Total Price: USD $1.88
Unit Price: USD $1.88005
≥1 USD $1.88005
≥10 USD $1.5428
≥100 USD $1.49435
≥500 USD $1.4459
≥1000 USD $1.39745
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 450mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -5.4A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 28W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 451m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.4A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 50 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 7.5 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -60V
Avalanche Energy Rating (Eas) 90 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
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