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BUK7M33-60EX
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SOT-1210, 8-LFPAK33
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
BUK7M33-60E - N-channel 60 V, 33 mO standard level MOSFET in LFPAK33
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Inventory: 7697
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.559777
≥1 USD $0.559777
≥10 USD $0.528092
≥100 USD $0.498204
≥500 USD $0.469998
≥1000 USD $0.443399
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 44W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 628pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 10.9nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.033Ohm
Pulsed Drain Current-Max (IDM) 98A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 10.3 mJ
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