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IPL60R085P7AUMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 4-PowerTSFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 4VSON
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Inventory: 8084
Minimum: 1
Total Price: USD $56.97
Unit Price: USD $56.9734
≥1 USD $56.9734
≥10 USD $46.7476
≥100 USD $45.2865
≥500 USD $43.82635
≥1000 USD $42.36525
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS? P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PSSO-N4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 154W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590μA
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 400V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.085Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 118 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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