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IRF830BPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
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Inventory: 4957
Minimum: 1
Total Price: USD $0.41
Unit Price: USD $0.4085
≥1 USD $0.4085
≥10 USD $0.33535
≥100 USD $0.3249
≥500 USD $0.31445
≥1000 USD $0.304
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN OVER NICKEL
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 5.3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
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