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IRF9520PBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 6.8A TO-220AB
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Inventory: 6981
Minimum: 1
Total Price: USD $0.46
Unit Price: USD $0.4636
≥1 USD $0.4636
≥10 USD $0.38
≥100 USD $0.3686
≥500 USD $0.35625
≥1000 USD $0.34485
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 600mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -6.8A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
Turn On Delay Time 9.6 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 600mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) -6.8A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 390pF
Recovery Time 200 ns
Drain to Source Resistance 600mOhm
Rds On Max 600 mΩ
Nominal Vgs -2 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
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