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IPB60R099C7ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V TO263-3
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Inventory: 1524
Minimum: 1
Total Price: USD $29.62
Unit Price: USD $29.619649
≥1 USD $29.619649
≥10 USD $27.943064
≥100 USD $26.361388
≥500 USD $24.869231
≥1000 USD $23.46154
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series CoolMOS? C7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490μA
Input Capacitance (Ciss) (Max) @ Vds 1819pF @ 400V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.099Ohm
Pulsed Drain Current-Max (IDM) 83A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 97 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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