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IPL60R065P7AUMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 4-PowerTSFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 4VSON
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Inventory: 4007
Minimum: 1
Total Price: USD $7.47
Unit Price: USD $7.46605
≥1 USD $7.46605
≥10 USD $6.1256
≥100 USD $5.93465
≥500 USD $5.74275
≥1000 USD $5.5518

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS? P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PSSO-N4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 201W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 201W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800μA
Input Capacitance (Ciss) (Max) @ Vds 2895pF @ 400V
Current - Continuous Drain (Id) @ 25°C 41A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C

Dimensions

Height 1.1mm

Compliance

RoHS Status ROHS3 Compliant

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