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IPT059N15N3ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerSFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 150V 155A 9-Pin(8+Tab) HSOF T/R
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Inventory: 6242
Minimum: 1
Total Price: USD $15
Unit Price: USD $14.998596
≥1 USD $14.998596
≥10 USD $14.149621
≥100 USD $13.348708
≥500 USD $12.59311
≥1000 USD $11.880297
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 150A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 75V
Current - Continuous Drain (Id) @ 25°C 155A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 155A
Drain-source On Resistance-Max 0.0059Ohm
Pulsed Drain Current-Max (IDM) 620A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 520 mJ
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