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IRFS4115TRL7PP
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 105A D2PAK-7
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Inventory: 3727
Minimum: 1
Total Price: USD $1.61
Unit Price: USD $1.610432
≥1 USD $1.610432
≥10 USD $1.519282
≥100 USD $1.43328
≥500 USD $1.352155
≥1000 USD $1.275613
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.8m Ω @ 63A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5320pF @ 50V
Current - Continuous Drain (Id) @ 25°C 105A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 105A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0118Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 420A
Avalanche Energy Rating (Eas) 230 mJ
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7
Transistor Element Material SILICON
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