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SI3442DV
Rochester Electronics, LLCRoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
SMALL SIGNAL N-CHANNEL MOSFET
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Inventory: 5450
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.1349
≥1 USD $0.1349
≥10 USD $0.1102
≥100 USD $0.10735
≥500 USD $0.10355
≥1000 USD $0.1007
Technical Details
Physical
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.6W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) 8V
Drain Current-Max (Abs) (ID) 4.1A
Drain-source On Resistance-Max 0.06Ohm
DS Breakdown Voltage-Min 20V
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