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CSD16415Q5
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 8SON
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Inventory: 9728
Minimum: 1
Total Price: USD $10.51
Unit Price: USD $10.507
≥1 USD $10.507
≥10 USD $8.62125
≥100 USD $8.3524
≥500 USD $8.0826
≥1000 USD $7.8128
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.05mm
Length 5mm
Width 6mm
Thickness 1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16415
Number of Elements 1
Power Dissipation-Max 3.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 16.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.15m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +16V, -12V
Fall Time (Typ) 12.7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 500 mJ
Nominal Vgs 1.5 V
Feedback Cap-Max (Crss) 230 pF
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