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FDD6688S
Rochester Electronics, LLCRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Inventory: 7454
Minimum: 1
Total Price: USD $1.6
Unit Price: USD $1.6017
≥1 USD $1.6017
≥10 USD $1.31385
≥100 USD $1.273
≥500 USD $1.23215
≥1000 USD $1.1913
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 69W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.1m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3.29pF @ 15V
Current - Continuous Drain (Id) @ 25°C 88A Ta
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 88A
Drain-source On Resistance-Max 0.0051Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 30V
Alternative Model
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