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BSC160N10NS3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
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Inventory: 6716
Minimum: 1
Total Price: USD $1.06
Unit Price: USD $1.058778
≥1 USD $1.058778
≥10 USD $0.998849
≥100 USD $0.942312
≥500 USD $0.888968
≥1000 USD $0.838649

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 60W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 8.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 50 mJ

Alternative Model

DMN2004DMK-7
Diodes Incorporated

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