Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.7W Ta 37W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 37W
Case Connection DRAIN
Turn On Delay Time 9.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 4.5V
Rise Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 800 mV