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FDS7096N3
Rochester Electronics, LLCRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Inventory: 5198
Minimum: 1
Total Price: USD $0.61
Unit Price: USD $0.61085
≥1 USD $0.61085
≥10 USD $0.5016
≥100 USD $0.48545
≥500 USD $0.47025
≥1000 USD $0.4541
Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish NICKEL PALLADIUM GOLD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.587pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 30V
Compliance
RoHS Status ROHS3 Compliant
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