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IRFR9024NTRLPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 55V 11A DPAK
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Inventory: 3950
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.10735
≥1 USD $0.10735
≥10 USD $0.08835
≥100 USD $0.0855
≥500 USD $0.08265
≥1000 USD $0.08075

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.175Ohm
Pulsed Drain Current-Max (IDM) 44A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 62 mJ

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