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FDP032N08
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 120A TO-220
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Inventory: 8996
Minimum: 1
Total Price: USD $1.52
Unit Price: USD $1.52095
≥1 USD $1.52095
≥10 USD $1.2483
≥100 USD $1.20935
≥500 USD $1.1704
≥1000 USD $1.13145
Technical Details
Supply Chain
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.2MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Turn On Delay Time 230 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 191 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 121 ns
Turn-Off Delay Time 335 ns
Continuous Drain Current (ID) 235A
Threshold Voltage 3.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 940A
Dimensions
Height 15.38mm
Length 10.1mm
Width 4.7mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.421g
Transistor Element Material SILICON
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