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SI7174DP-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 60A PPAK SO-8
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Inventory: 561
Minimum: 1
Total Price: USD $9.83
Unit Price: USD $9.830043
≥1 USD $9.830043
≥10 USD $9.273624
≥100 USD $8.7487
≥500 USD $8.253495
≥1000 USD $7.786309
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Resistance 7mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 40V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 75V
Nominal Vgs 4.5 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.04mm
Length 4.9mm
Width 5.89mm
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