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IRLML2030TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 2.7A SOT-23-3
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Inventory: 4365
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.1881
≥1 USD $0.1881
≥10 USD $0.15485
≥100 USD $0.1501
≥500 USD $0.14535
≥1000 USD $0.1406

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 1.016mm
Length 3.0226mm
Width 1.397mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 100MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 4.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.7A Ta
Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
Rise Time 3.3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 4.5 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.2A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 11A
Recovery Time 14 ns
Nominal Vgs 1.7 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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