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FQD5N30TM

Rochester Electronics, LLC
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description QFET? Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 4.4A Tc 4.4A 2.5W Ta 45W Tc 300V
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Inventory: 9155
Minimum: 1
Total Price: USD $4.72
Unit Price: USD $4.715083
≥1 USD $4.715083
≥10 USD $4.44819
≥100 USD $4.1964
≥500 USD $3.958869
≥1000 USD $3.734789

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 45W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 4.4A
Drain-source On Resistance-Max 0.9Ohm
Pulsed Drain Current-Max (IDM) 17.6A
DS Breakdown Voltage-Min 300V
Avalanche Energy Rating (Eas) 340 mJ

Alternative Model

No data

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