Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
STD10P6F6
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P CH 60V 10A DPAK
PDF
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 8580
Minimum: 1
Total Price: USD $1.98
Unit Price: USD $1.98389
≥1 USD $1.98389
≥10 USD $1.8716
≥100 USD $1.76566
≥500 USD $1.66571
≥1000 USD $1.57143
≥3000 USD $1.48248
Technical Details
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Series DeepGATE?, STripFET? VI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 180MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STD10
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 48V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 16.5 ns
Continuous Drain Current (ID) 10A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 80 mJ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You