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SI7613DN-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? 1212-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 35A 1212-8 PPAK
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Inventory: 9168
Minimum: 1
Total Price: USD $2.35
Unit Price: USD $2.3503
≥1 USD $2.3503
≥10 USD $1.9285
≥100 USD $1.86865
≥500 USD $1.80785
≥1000 USD $1.748
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.04mm
Length 3.05mm
Width 3.05mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.8W Ta 52.1W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.7m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2620pF @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 7 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 17A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 35A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 60A
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