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FDMC86265P
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET PT5 150V/25V Pch PowerTrench Mosfet
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Inventory: 8368
Minimum: 1
Total Price: USD $4.43
Unit Price: USD $4.431355
≥1 USD $4.431355
≥10 USD $4.180514
≥100 USD $3.943891
≥500 USD $3.720653
≥1000 USD $3.51004
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 165.33333mg
Transistor Element Material SILICON
Dimensions
Height 750μm
Length 3.3mm
Width 3.3mm
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.3W Ta 16W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 75V
Current - Continuous Drain (Id) @ 25°C 1A Ta 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V
Rise Time 2.2 ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 2A
Avalanche Energy Rating (Eas) 6 mJ
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