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IPA60R125CPXKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 25A TO220-3
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Inventory: 9034
Minimum: 1
Total Price: USD $1.5
Unit Price: USD $1.504591
≥1 USD $1.504591
≥10 USD $1.419422
≥100 USD $1.33908
≥500 USD $1.263289
≥1000 USD $1.191779
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 5 ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 25A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 82A
Avalanche Energy Rating (Eas) 708 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
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