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AUIRF1324WL
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Wide Leads
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 24V 240A TO-262
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Inventory: 4552
Minimum: 1
Total Price: USD $56.23
Unit Price: USD $56.232794
≥1 USD $56.232794
≥10 USD $53.049803
≥100 USD $50.046986
≥500 USD $47.214136
≥1000 USD $44.541639
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Wide Leads
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 11.3mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7630pF @ 19V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 200 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 240A
Threshold Voltage 2V
JEDEC-95 Code TO-262AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 24V
Nominal Vgs 2 V
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