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NTMS4937NR2G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.6A 8SOIC
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Inventory: 8884
Minimum: 1
Total Price: USD $7.33
Unit Price: USD $7.3321
≥1 USD $7.3321
≥10 USD $6.01635
≥100 USD $5.82825
≥500 USD $5.64015
≥1000 USD $5.45205
Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 810mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.36W
Turn On Delay Time 12.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2563pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.6A Ta
Gate Charge (Qg) (Max) @ Vgs 38.5nC @ 10V
Rise Time 3.6 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 38.9 ns
Turn-Off Delay Time 33.8 ns
Continuous Drain Current (ID) 8.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11.2A
Drain-source On Resistance-Max 0.0065Ohm
Drain to Source Breakdown Voltage 30V
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