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SI7149DP-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
VISHAY - SI7149DP-T1-GE3 - MOSFET-Transistor, p-Kanal, -50 A, -30 V, 0.0042 ohm, -10 V, -1.2 V
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Inventory: 15778
Minimum: 1
Total Price: USD $0.92
Unit Price: USD $0.91567
≥1 USD $0.91567
≥10 USD $0.86384
≥100 USD $0.81495
≥500 USD $0.76882
≥1000 USD $0.7253
≥3000 USD $0.68425
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.04mm
Length 5.15mm
Width 6.15mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 5.2MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 100 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4590pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 147nC @ 10V
Rise Time 150 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) 23.7A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 20 mJ
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