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STD180N4F6
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL 40 V, 3.8 MOHM TYP., 1
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Inventory: 4284
Minimum: 1
Total Price: USD $1.37
Unit Price: USD $1.369152
≥1 USD $1.369152
≥10 USD $1.291654
≥100 USD $1.21854
≥500 USD $1.149562
≥1000 USD $1.084498
Technical Details
Supply Chain
Lifecycle Status NRND (Last Updated: 7 months ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STD18
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 130W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7735pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0028Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 40V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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