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IPB160N04S3H2ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-7, D2Pak (6 Leads + Tab)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 160A TO263-7
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Inventory: 6123
Minimum: 1
Total Price: USD $6.71
Unit Price: USD $6.7127
≥1 USD $6.7127
≥10 USD $5.5081
≥100 USD $5.3352
≥500 USD $5.16325
≥1000 USD $4.9913
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 214W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 9600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 898 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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